DynaTex GST 150 Manufacturer:DynaTex Condition:Used,we sell it at AS IS. Price:Best Offer PRODUCT BENEFITS ? More real estate and narrower street widths, because Zero kerf loss allows higher die density on the wafer ? Increased production rates ? Chip free results ? Less residual stress ? No toxic water discharge ? No D.I. water costs PRODUCT FEATURES Automatic...">

    
    

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      Home > Electronic, IT & Office Equipment > Electronic Manufacturing Machinery > Backside Equipment DynaTex GST 150
      Global Nanotech Equipment Co.
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      Backside Equipment DynaTex GST 150
      Backside Equipment > DynaTex GST 150
      Manufacturer:DynaTex
      Condition:Used,we sell it at AS IS.
      Price:Best Offer

      PRODUCT BENEFITS
      ? More real estate and narrower street widths,
      because Zero kerf loss allows higher die
      density on the wafer
      ? Increased production rates
      ? Chip free results
      ? Less residual stress
      ? No toxic water discharge
      ? No D.I. water costs
      PRODUCT FEATURES
      Automatic
      ? Capable of completely and automatically
      scribing and breaking many substrate
      materials.
      Cost effective
      ? Reduced production time
      ? System integration allows easy hook-up and
      transport
      ? Superior yields and improved efficiency
      Environmental
      ? No D.I. or toxic wastewater
      Versatile
      ? Fully programmable for all scribing and
      breaking parameters, including TrueAngle?
      diamond tool positioning
      ? Infinitely programmable with Pentium?
      powered Windows? interface
      Easy
      ? Stored Process eliminates operator
      adjustments when changing between wafer
      types
      GST-150 SPECIFICATIONS
      Wafer Size: 150mm max. (6" max.)
      Wafer Thickness: 40 um to 1725 um (material
      dependant)
      Minimum Die Size: 200 um square (dependent
      on type of material and wafer thickness)
      Minimum Wafer Index: 5 um with Std.
      Encoders; 2 um with Optional Hi-Res.
      Encoders
      Maximum Wafer Index: 150 mm
      Maximum Backside Metal: 10 um (dependent
      on type of material and process)
      Scribe Channel Width: < 5 um
      Load Time: < 15 seconds
      Alignment Time: < 30 seconds
      Scribe Speed: 2 mm/sec to 100mm/sec
      (0.080"/sec to 4 "/sec) (dependent on type of
      material and process)
      Break Rate: 2 breaks/sec. (depending on
      substrate thickness and backside metals)
      Break Method: Patented impulse bar
      Vision System: Digital Hi-Res BW/Color
      Camera; 17" Color Monitor; Pattern
      Recognition System for Auto Alignment, Edge
      Detection for automatic bar and piece
      alignment, and Auto Step-Correction
      Programmable: Scribe Tool Life; Scribe Angle;
      Scribe Approach Speed; Scribe Force; Scribe
      Speed; Scribe Extension; Break Force; Multiple
      Die Size; Fiducial Image Storage; Wafer Type
      and Profile; Multiple Wafer Profile Storage.
      (Profile programmable in metric or imperial
      units)
      Wafer Mounting:Std: Metal Saw Frames (FF-
      105 and FF-108); Optional: 7" or 6" Hoop Sets
      (limits max. wafer size to 4" and 3")
      Substrates: Saphire, GaAs, LiNbO3, Glass, InP,
      GaP, Silicon, Quartz

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